XFS-E 10
Scanner Probe 30 MHz up to 6 GHz
 
        				
        					
        						 
        					
        
        					Short description
The electrode in the probe head of the XFS-E 10 scanner probe has a width of approx. 0.2 mm. With the probe even smallest E-field sources can be located, e.g. conducting paths with a width of 0.1 mm or single pins on multi pinned ICs. To measure, the E-field probe is positioned onto the object.
The XFS-E 10 probe is a passive near-field probe. Normally the probe head is positioned directly onto the measured object (high electric field strength). It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field scanner probe has an internal terminating resistance.
 
           
          ![Frequency response [dBµV] / [dBµA/m]](/fileadmin/Bilder300/Disturbance emission_near field probe_XFS-E 10_frequency response_en_wGM.png?v=1761830853767) 
        									![E- field correction curve [dBµV/mm] / [dBµV]](/fileadmin/Bilder300/Disturbance emission_scanner probe_XFS-E10_E-field correction curve_en_wGM.png?v=1761830853767)