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P1202 / P1301 L-ESD set

Langer ESD 场耦合 200 ps

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  • P1202 / P1301 L-ESD set, Langer ESD 场耦合 200 ps
  • Measurement set-up with P1202 L-ESD Magnetic Field Source Langer Pulse 0.2/2.5 ns
    Measurement set-up with P1202 L-ESD Magnetic Field Source Langer Pulse 0.2/2.5 ns
  • Measurement assembly with P1202 L-ESD (The devices marked * are not includedin the scope of delivery.)
    Measurement assembly with P1202 L-ESD (The devices marked * are not includedin the scope of delivery.)
  • Scope of delivery P1202 / P1301 L-ESD set
    Scope of delivery P1202 / P1301 L-ESD set
P1202 / P1301 L-ESD set, Langer ESD 场耦合 200 ps Measurement set-up with P1202 L-ESD Magnetic Field Source Langer Pulse 0.2/2.5 ns Measurement assembly with P1202 L-ESD (The devices marked * are not includedin the scope of delivery.) Scope of delivery P1202 / P1301 L-ESD set
  • P1202 / P1301 L-ESD set, Langer ESD 场耦合 200 ps
  • Measurement set-up with P1202 L-ESD Magnetic Field Source Langer Pulse 0.2/2.5 ns
  • Measurement assembly with P1202 L-ESD (The devices marked * are not includedin the scope of delivery.)
  • Scope of delivery P1202 / P1301 L-ESD set
Short description

Langer ESD 200 ps型场耦合探头组中包含的场源产生快速电场的和磁场的静电放电脉冲场（200 ps）。这些场可以确定地、可复现地加载在集成电路上，从而确定集成电路对静电放电场的抗干扰性。
其背景是扁平元件组和电子设备的静电放电场抗干扰性。这些设备要经受静电放电测试（IEC 61000-4-2）。测试时与扁平元件组耦合的静电放电干扰会产生除标准静电放电脉冲场之外的快速电场和磁场（200 ps）。产生的场作用于扁平元件组的表面，并且能穿过集成电路的外壳。若这些场穿过集成电路，则在集成电路中产生干扰过程。
因此除了在集成电路引脚上的与电路耦合的静电放电干扰之外，磁场和电场对集成电路的影响也是一个很主要的干扰途径。

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